Optical Properties of Cadmium Sulphide (CdS) Thin Films Spin-Coated on Glass Substrates
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Deanship of Research & Graduate Studies, Yarmouk University, Irbid, Jordan
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Abstract
CdS thin films were synthesized on a glass substrate using spin coating method.
The effects of annealing temperature on the optical properties of the prepared CdS films
were investigated for different annealing temperatures of 200, 300 and 400 °C. Cadmium
acetate, thiourea and ammonia were used as the source materials for the preparation of the
thin films. The elemental composition, morphological, optical and structural properties of
the films obtained by spin coating were investigated using Energy Dispersive X- ray
Spectroscopy (EDAX), Scanning Electron Microscope (SEM), UV Spectrophotometry and
X-ray diffraction (XRD) respectively. The SEM image of the unannealed film shows a
spherical morphology and an irregular pattern without any void. It also shows that the film
covers the substrate well. Annealing leads to an increase in transmittance with the highest
transmission of 87% observed for the film annealed at 400oC. With increase in annealing
temperature, optical parameters like extinction coefficient and dielectric constants show a
reduction, while refractive index and skin depth exhibit an improvement. The absorption
coefficient increases with increasing photon energy in the range 3.6 to 4.0 eV. The band
gap values of the CdS thin film samples were found to be in the range between 3.14 eV and
3.63 eV. The bandgap is somewhat greater than the value of bulk CdS due to quantum size
effect. EDX image confirmed the presence of Cadmium and Sulphur in the prepared CdS
films. Annealing did not significantly change the extinction coefficient. The X-ray
diffraction confirms the cubic structure of CdS deposited on glass substrate, where
reflections from (111), (200), (220) and (311) planes are clearly shown with a preferential
orientation along (111) plane. Debye-Scherer equation was used to determine the crystallite
size of the most intense plane (111) and the value was found to be 8.4 nm.
